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Samsung

Description : Memory 256M ( 16M x 16) MCP - 84 BGA Type ( 8mmx 11.6mmx 1.0mm )

Part Name(s) : HY27LS08561A HY27LS08561A-F HY27LS08561A-FP HY27LS08561A-S HY27LS08561A-SP HY27LS08561A-T HY27LS08561A-TP HY27LS08562A HY27LS08562A-F HY27LS08562A-FP

Hynix Semiconductor

Description : 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash

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Part Name(s) : 70FL256P0XBHI20 70FL256P0XBHI21 70FL256P0XMFI00 70FL256P0XMFI01 S70FL256P S70FL256P0XBFI000 S70FL256P0XBFI001 S70FL256P0XBFI003 S70FL256P0XBFI010 S70FL256P0XBFI011

Cypress Semiconductor

Description : 256-Mbit 3.0V Flash

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Part Name(s) : HY27SS(08/16)561M HY27SS08561M HY27SS08561M-F HY27SS08561M-FP HY27SS08561M-T HY27SS08561M-TP HY27SS08561M-V HY27SS08561M-VP HY27SS16561M HY27SS16561M-F

Hynix Semiconductor

Description : 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Memory

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Part Name(s) : AP26G40GEO-HF

Advanced Power Electronics Corp

Description : N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

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Part Name(s) : AP30G40GEO-HF

Description : N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

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Part Name(s) : AMS2950 AMS2950AC AMS2950AC-2.5 AMS2950AC-2.5V AMS2950AC-3.0 AMS2950AC-3.0V AMS2950AC-3.3 AMS2950AC-3.3V AMS2950ACN-2.5 AMS2950ACN-2.5V

Advanced Monolithic Systems Inc

Description : 150mA LOW DROPOUT VOLTAGE REGULATOR

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Part Name(s) : HYS64V64220GBDL HYS64V64220GBDL-7-D HYS64V64220GBDL-7.5-D HYS64V64220GBDL-8-D HYS64V64220GBDL-75-D

Infineon Technologies

Description : 144 pin SO-DIMM SDRAM Modules

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Part Name(s) : AMS2950AC AMS2950ACN AMS2950ACN-2.5 AMS2950ACN-2.5V AMS2950ACN-3.0 AMS2950ACN-3.0V AMS2950ACN-3.3 AMS2950ACN-3.3V AMS2950ACN-X AMS2950C

Advanced Monolithic Systems Inc

Description : 150mA LOW DROPOUT VOLTAGE REGULATOR

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Part Name(s) : SST26VF064B SST26VF064BA SST26VF064BT-104-5I-MF SST26VF064BAT-104-5I-MF SST26VF064BT-104-5I-SM SST26VF064BAT-104-5I-SM SST26VF064BT-104-5I-SO SST26VF064BAT-104-5I-SO SST26VF064BT-104-5I-TD SST26VF064BAT-104-5I-TD

Microchip Technology

Description : 3.0V Serial Quad I/O (SQI) Flash Memory

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Part Name(s) : HY5S5B6GLF-6 HY5S5B6GLF-H HY5S5B6GLF-S HY5S5B6GLFP-6 HY5S5B6GLFP-H HY5S5B6GLFP-S HY5S5B6GLF-6E HY5S5B6GLF-HE HY5S5B6GLF-SE HY5S5B6GLFP-6E

Hynix Semiconductor

Description : 256Mbit (16Mx16bit) Mobile SDR Memory

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Part Name(s) : K8P5616UZB K8P5616UZB-EC4E K8P5616UZB-EE4E K8P5616UZB-EI4E K8P5616UZB-PC4E K8P5616UZB-PE4E K8P5616UZB-PI4E

Samsung

Description : 256Mb B-die Page NOR Flash

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Part Name(s) : EV1527DR-02A MP1527DR

Monolithic Power Systems

Description : 1.3MHz Low Power LED Torch/Flash Driver

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Part Name(s) : SC621 SC621EVB SC621ULTRT

Semtech Corporation

Description : LED Light Management Unit Charge Pump, 4 LEDs, 400mA Flash LED, Dual LDOs, and SemWire™ Interface (Rev - 2007)

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Part Name(s) : SC621A SC621AEVB SC621AULTRT

Semtech Corporation

Description : LED Light Management Unit Charge Pump, 4 LEDs, 400mA Flash LED, Dual LDOs, and I2C Interface (Rev - 2007)

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Part Name(s) : K5A3X80YTC K5A3380YBC-T755 K5A3380YBC-T855 K5A3380YTC-T755 K5A3380YTC-T855 K5A3280YBC-T755 K5A3280YBC-T855 K5A3280YTC-T755 K5A3280YTC-T855

Samsung

Description : MCP MEMORY

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Part Name(s) : K5A3X40YTC K5A3340YT K5A3240YT K5A3240YBC-T755 K5A3240YBC-T855 K5A3240YTC-T755 K5A3240YTC-T855 K5A3340YBC-T755 K5A3340YBC-T855 K5A3340YTC-T755

Samsung

Description : Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM

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Part Name(s) : 8G136 GT8G136

Toshiba

Description : TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

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Part Name(s) : TE28F256J3D-95 TE28F256J3D-75 TE28F128J3D-95 TE28F128J3D-75 TE28F640J3D-95 TE28F640J3D-75 TE28F320J3D-95 TE28F320J3D-75 JS28F256J3D-95 JS28F256J3D-75

Intel

Description : Intel® Embedded Flash Memory (J3 v. D)

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Part Name(s) : SC621A SC621AULTRT SC621AEVB

Semtech Corporation

Description : LED Light Management Unit Charge Pump, 4 LEDs, 400mA Flash LED, Dual LDOs, and I2C Interface

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